POWER BIPOLAR TRANSISTOR NPN | onsemi

Bipolar (BJT) Transistor NPN 600 V 8 A 13MHz 100 W Through Hole TO-220AB

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Unit Price ($ / pc.)
0.135 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.12825 $
500 pcs.
0.1215 $
1000 pcs.
0.11475 $
3000 pcs.
0.108 $
10000 pcs.
0.10125 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The MJE18206 is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-220-3 package by onsemi made. The MJE18206 is using SPQ 1110 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)600 V
Vce Saturation (Max) @ Ib, Ic750mV @ 600mA, 3A
Current - Collector Cutoff (Max)200μA
DC Current Gain (hFE) (Min) @ Ic, Vce18 @ 1A, 5V
Power - Max100 W
Frequency - Transition13MHz
Operating Temperature-65°C ~ 150°C (TJ)
Grade-
Qualification-
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 1110 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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