POWER BIPOLAR TRANSISTOR NPN | Renesas Electronics Corporation
Bipolar (BJT) Transistor NPN - Darlington 120 V 10 A 80 W Through Hole TO-3P
Images may differ
Unit Price ($ / pc.)
1.735 $
*
Available: 171 pcs.
Next delivery: 2541 pcs.
Manufacturer Leadtime: **
Description
The 2SD1436K-E is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-3P-3, SC-65-3 package by Renesas Electronics Corporation made. The 2SD1436K-E is using SPQ 87 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Renesas Electronics Corporation |
Series | - |
Package | Bulk |
Product Status | Active |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 10 A |
Voltage - Collector Emitter Breakdown (Max) | 120 V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
Current - Collector Cutoff (Max) | 10μA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
Power - Max | 80 W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Supplier Device Package | TO-3P |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 87 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |