NOW WEEN - PHE13009 - POWER BIPO | NXP USA Inc.
Bipolar (BJT) Transistor NPN 400 V 12 A 80 W Through Hole TO-220AB
Images may differ
Unit Price ($ / pc.)
0.165 $
*
Available: 184 pcs.
Next delivery: 2814 pcs.
Manufacturer Leadtime: **
Description
The PHE13009/DG,127 is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-220-3 package by NXP USA Inc. made. The PHE13009/DG,127 is using SPQ 912 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | NXP USA Inc. |
Series | - |
Package | Bulk |
Product Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 12 A |
Voltage - Collector Emitter Breakdown (Max) | 400 V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 1.6A, 8A |
Current - Collector Cutoff (Max) | 100μA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5A, 5V |
Power - Max | 80 W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 912 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
Search
PHE13009/DG,127 ECAD module
PHE13009/DG,127 datesheet
PHE13009/DG,127 specification
PHE13009/DG,127 certificate
PHE13009/DG,127 component
PHE13009/DG,127 substitute
PHE13009/DG,127 packaging