NOW WEEN - PHE13009 - POWER BIPO | NXP USA Inc.

Bipolar (BJT) Transistor NPN 400 V 12 A 80 W Through Hole TO-220AB

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Unit Price ($ / pc.)
0.165 $ *
Available: 184 pcs.
Next delivery: 2814 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.15675 $
500 pcs.
0.1485 $
1000 pcs.
0.14025 $
3000 pcs.
0.132 $
10000 pcs.
0.12375 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The PHE13009/DG,127 is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-220-3 package by NXP USA Inc. made. The PHE13009/DG,127 is using SPQ 912 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrNXP USA Inc.
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)400 V
Vce Saturation (Max) @ Ib, Ic2V @ 1.6A, 8A
Current - Collector Cutoff (Max)100μA
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 5A, 5V
Power - Max80 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 912 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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