TRANS PNP 120V 0.1A SMINI | Toshiba Semiconductor and Storage
Bipolar (BJT) Transistor PNP 120 V 100 mA 100MHz 150 mW Surface Mount S-Mini
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Unit Price ($ / pc.)
0.01939 $
*
Available: 480 pcs.
Next delivery: 9030 pcs.
Manufacturer Leadtime: 40 Weeks **
Description
The 2SA1312GRTE85LF is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-236-3, SC-59, SOT-23-3 package by Toshiba Semiconductor and Storage made. The 2SA1312GRTE85LF is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tape & Reel (TR) |
Product Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 120 V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
Power - Max | 150 mW |
Frequency - Transition | 100MHz |
Operating Temperature | 125°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | S-Mini |
Base Product Number | 2SA1312 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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