NPN SILICON EPITAXIAL DARLINGTON | Renesas Electronics Corporation

Bipolar (BJT) Transistor Array 7 NPN Darlington 60V 500mA 900mW Through Hole 16-DIP

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Unit Price ($ / pc.)
0.505 $ *
Available: 175 pcs.
Next delivery: 2625 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.47975 $
500 pcs.
0.4545 $
1000 pcs.
0.42925 $
3000 pcs.
0.404 $
10000 pcs.
0.37875 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The UPA2003C-A is a common industry Bipolar Transistor Arrays housed in a RoHS compliant 16-DIP (0.300", 7.62mm) package by Renesas Electronics Corporation made. The UPA2003C-A is using SPQ 299 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrRenesas Electronics Corporation
Series-
PackageBulk
Product StatusActive
Transistor Type7 NPN Darlington
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.6V @ 500μA, 350mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 350mA, 2V
Power - Max900mW
Frequency - Transition-
Operating Temperature-30°C ~ 75°C
Mounting TypeThrough Hole
Package / Case16-DIP (0.300", 7.62mm)
Supplier Device Package16-DIP
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 299 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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