TRANS 8NPN DARL 50V 0.5A 18DIP | Toshiba Semiconductor and Storage

Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 1.47W Through Hole 18-DIP

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Available: 906 pcs.
Next delivery: 17976 pcs.
Available in 8 Weeks
Manufacturer Leadtime: **
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Description

The ULN2803APG,CN is a common industry Bipolar Transistor Arrays housed in a RoHS compliant 18-DIP (0.300", 7.62mm) package by Toshiba Semiconductor and Storage made. The ULN2803APG,CN is using SPQ 800 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
Series-
PackageTube
Product StatusObsolete
Transistor Type8 NPN Darlington
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic1.6V @ 500μA, 350mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 350mA, 2V
Power - Max1.47W
Frequency - Transition-
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeThrough Hole
Package / Case18-DIP (0.300", 7.62mm)
Supplier Device Package18-DIP
Base Product NumberULN2803
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 800 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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