TRANS 8NPN DARL 50V 0.5A 18DIP | Toshiba Semiconductor and Storage
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 1.47W Through Hole 18-DIP
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Available: 906 pcs.
Next delivery: 17976 pcs.
Manufacturer Leadtime: **
Description
The ULN2803APG,CN is a common industry Bipolar Transistor Arrays housed in a RoHS compliant 18-DIP (0.300", 7.62mm) package by Toshiba Semiconductor and Storage made. The ULN2803APG,CN is using SPQ 800 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tube |
Product Status | Obsolete |
Transistor Type | 8 NPN Darlington |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500μA, 350mA |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
Power - Max | 1.47W |
Frequency - Transition | - |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Through Hole |
Package / Case | 18-DIP (0.300", 7.62mm) |
Supplier Device Package | 18-DIP |
Base Product Number | ULN2803 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 800 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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ULN2803APG,CN ECAD module
ULN2803APG,CN specification
ULN2803APG,CN certificate