MOSFET N-CH 650V 10A ITO220AB | Diodes Incorporated

N-Channel 650 V 10A (Tc) 31W (Tc) Through Hole ITO-220AB (Type TH)

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Unit Price ($ / pc.)
$ *
Available: 152 pcs.
Next delivery: 2142 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
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500 pcs.
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1000 pcs.
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3000 pcs.
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Description

The DMJ65H650SCTI is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 Full Pack, Isolated Tab package by Diodes Incorporated made. The DMJ65H650SCTI is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrDiodes Incorporated
Series-
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs12.9 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds639 pF @ 100 V
FET Feature-
Power Dissipation (Max)31W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220AB (Type TH)
Package / CaseTO-220-3 Full Pack, Isolated Tab
Base Product NumberDMJ65
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes