MOSFET N-CH 600V 10A I2PAK | STMicroelectronics

N-Channel 600 V 10A (Tc) 115W (Tc) Through Hole I2PAK

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Available: 153 pcs.
Next delivery: 2163 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
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Description

The STB10NK60Z-1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-262-3 Long Leads, I2PAK, TO-262AA package by STMicroelectronics made. The STB10NK60Z-1 is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrSTMicroelectronics
SeriesSuperMESH
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1370 pF @ 25 V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Base Product NumberSTB10N
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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STB100NH02LT4