SICFET N-CH 1200V 40A HIP247 | STMicroelectronics

N-Channel 1200 V 40A (Tc) 270W (Tc) Through Hole HiP247

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Available: 154 pcs.
Next delivery: 2184 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
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Description

The SCT30N120D2 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-247-3 package by STMicroelectronics made. The SCT30N120D2 is using SPQ 490 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrSTMicroelectronics
Series-
PackageTray
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs105 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 400 V
FET Feature-
Power Dissipation (Max)270W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247
Package / CaseTO-247-3
Base Product NumberSCT30
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 490 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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