MOSFET N-CH 115V 3.4A 6DFN | Diodes Incorporated
N-Channel 115 V 3.4A (Ta) 900mW (Ta) Surface Mount X2-DFN2020-6
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Unit Price ($ / pc.)
0.155125 $
*
Available: 154 pcs.
Next delivery: 2184 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 8 Weeks **
Quantity
Price per unit*
100 pcs.
0.147369 $
500 pcs.
0.139613 $
1000 pcs.
0.131856 $
3000 pcs.
0.1241 $
10000 pcs.
0.116344 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The DMT12H090LFDF4-7 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 6-PowerXDFN package by Diodes Incorporated made. The DMT12H090LFDF4-7 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Diodes Incorporated |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 115 V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 251 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | X2-DFN2020-6 |
| Package / Case | 6-PowerXDFN |
| Base Product Number | DMT12 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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