MOSFET N-CH 600V 2.2A TO220AB | Vishay Siliconix

N-Channel 600 V 2.2A (Tc) 50W (Tc) Through Hole TO-220AB

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Unit Price ($ / pc.)
$ *
Available: 157 pcs.
Next delivery: 2247 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
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**Subject to prior sale
Description

The IRFBC20 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Vishay Siliconix made. The IRFBC20 is using SPQ 1000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrVishay Siliconix
Series-
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.4Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
Base Product NumberIRFBC20
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 1000 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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