MOSFET N-CH 200V 600MA 4DIP | Vishay Siliconix

N-Channel 200 V 600mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

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Unit Price ($ / pc.)
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Available: 158 pcs.
Next delivery: 2268 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
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**Subject to prior sale
Description

The IRFD210 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 4-DIP (0.300", 7.62mm) package by Vishay Siliconix made. The IRFD210 is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrVishay Siliconix
Series-
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 25 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package4-HVMDIP
Package / Case4-DIP (0.300", 7.62mm)
Base Product NumberIRFD210
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 2500 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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