MOSFET N-CH 200V 600MA 4DIP | Vishay Siliconix
N-Channel 200 V 600mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
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Available: 158 pcs.
Next delivery: 2268 pcs.
Manufacturer Leadtime: **
Description
The IRFD210 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 4-DIP (0.300", 7.62mm) package by Vishay Siliconix made. The IRFD210 is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | - |
Package | Tube |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 360mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | 4-HVMDIP |
Package / Case | 4-DIP (0.300", 7.62mm) |
Base Product Number | IRFD210 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 2500 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |