MOSFET 650V NCH SIC TRENCH | Infineon Technologies
N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-3-41
Images may differ 
Unit Price ($ / pc.)
3.87945 $
*
Available: 164 pcs.
Next delivery: 2394 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 20 Weeks **
Quantity
Price per unit*
100 pcs.
3.685478 $
500 pcs.
3.491505 $
1000 pcs.
3.297533 $
3000 pcs.
3.10356 $
10000 pcs.
2.909588 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IMW65R048M1HXKSA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-247-3 package by Infineon Technologies made. The IMW65R048M1HXKSA1 is using SPQ 30 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | CoolSIC M1 |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 20.1A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 6mA |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 18 V |
| Vgs (Max) | +23V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1118 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-41 |
| Package / Case | TO-247-3 |
| Base Product Number | IMW65R048 |
Download
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 30 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search