GAN N-CH 600V 10A LSON-8 | Infineon Technologies

N-Channel 600 V 10A (Tc) 62.5W (Tc) Surface Mount PG-LSON-8-1

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Unit Price ($ / pc.)
$ *
Available: 165 pcs.
Next delivery: 2415 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
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500 pcs.
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1000 pcs.
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3000 pcs.
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**Subject to prior sale
Description

The IGLD60R190D1AUMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-LDFN Exposed Pad package by Infineon Technologies made. The IGLD60R190D1AUMA1 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrInfineon Technologies
SeriesCoolGaN
PackageTape & Reel (TR)
Product StatusObsolete
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id1.6V @ 960μA
Vgs (Max)-10V
Input Capacitance (Ciss) (Max) @ Vds157 pF @ 400 V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-LSON-8-1
Package / Case8-LDFN Exposed Pad
Base Product NumberIGLD60
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 3000 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes