MOSFET N-CH 250V 450MA 4DIP | Harris Corporation

N-Channel 250 V 450mA (Ta) Through Hole 4-HVMDIP

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Unit Price ($ / pc.)
0.32 $ *
Available: 165 pcs.
Next delivery: 2415 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.304 $
500 pcs.
0.288 $
1000 pcs.
0.272 $
3000 pcs.
0.256 $
10000 pcs.
0.24 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IRFD213 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 4-DIP (0.300", 7.62mm) package by Harris Corporation made. The IRFD213 is using SPQ 468 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrHarris Corporation
Series-
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250 V
Current - Continuous Drain (Id) @ 25°C450mA (Ta)
Rds On (Max) @ Id, Vgs2Ohm @ 270mA, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 25 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package4-HVMDIP
Package / Case4-DIP (0.300", 7.62mm)
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 468 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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