MOSFET N-CH 250V 450MA 4DIP | Harris Corporation
N-Channel 250 V 450mA (Ta) Through Hole 4-HVMDIP
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Unit Price ($ / pc.)
0.32 $
*
Available: 165 pcs.
Next delivery: 2415 pcs.
Manufacturer Leadtime: **
Description
The IRFD213 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 4-DIP (0.300", 7.62mm) package by Harris Corporation made. The IRFD213 is using SPQ 468 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Harris Corporation |
Series | - |
Package | Tube |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250 V |
Current - Continuous Drain (Id) @ 25°C | 450mA (Ta) |
Rds On (Max) @ Id, Vgs | 2Ohm @ 270mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | 4-HVMDIP |
Package / Case | 4-DIP (0.300", 7.62mm) |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 468 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |