MOSFET N-CH 100V 10.3A DIRECTFET | Infineon Technologies
N-Channel 100 V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET MN
Images may differ 
Unit Price ($ / pc.)
$
*
Available: 168 pcs.
Next delivery: 2478 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0 $
500 pcs.
0 $
1000 pcs.
0 $
3000 pcs.
0 $
10000 pcs.
0 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IRF6644TR1PBF is a common industry Single FETs, MOSFETs housed in a RoHS compliant DirectFET Isometric MN package by Infineon Technologies made. The IRF6644TR1PBF is using SPQ 1000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | HEXFET |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10.3A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 150μA |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET MN |
| Package / Case | DirectFET Isometric MN |
Download
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 1000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search