SICFET N-CH 650V 18A 4DFN | Qorvo

N-Channel 650 V 18A (Tc) 179W (Tc) Surface Mount 4-DFN (8x8)

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Unit Price ($ / pc.)
$ *
Available: 170 pcs.
Next delivery: 2520 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
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500 pcs.
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1000 pcs.
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3000 pcs.
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10000 pcs.
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*incl. VAT plus shipping costs
**Subject to prior sale
Description

The UF3SC065030D8S is a common industry Single FETs, MOSFETs housed in a RoHS compliant 4-PowerTSFN package by Qorvo made. The UF3SC065030D8S is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrQorvo
Series-
PackageTape & Reel (TR)
Product StatusObsolete
FET TypeN-Channel
TechnologySiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)12V
Rds On (Max) @ Id, Vgs42mOhm @ 20A, 12V
Vgs(th) (Max) @ Id6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs43 nC @ 12 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 100 V
FET Feature-
Power Dissipation (Max)179W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-DFN (8x8)
Package / Case4-PowerTSFN
Base Product NumberUF3SC065030
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 2500 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes