SICFET N-CH 1200V 120A TO247-4 | Qorvo

N-Channel 1200 V 120A (Tc) 789W (Tc) Through Hole TO-247-4

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Unit Price ($ / pc.)
32.36546 $ *
Available: 170 pcs.
Next delivery: 2520 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 44 Weeks **
Quantity
Price per unit*
100 pcs.
30.747187 $
500 pcs.
29.128914 $
1000 pcs.
27.510641 $
3000 pcs.
25.892368 $
10000 pcs.
24.274095 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The UF3SC120009K4S is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-247-4 package by Qorvo made. The UF3SC120009K4S is using SPQ 30 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrQorvo
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)12V
Rds On (Max) @ Id, Vgs11mOhm @ 100A, 12V
Vgs(th) (Max) @ Id6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs234 nC @ 15 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8512 pF @ 100 V
FET Feature-
Power Dissipation (Max)789W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4
Base Product NumberUF3SC120009
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 30 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes