SICFET N-CH 1200V 33A TO247-3 | Qorvo

N-Channel 1200 V 33A (Tc) 254.2W (Tc) Through Hole TO-247-3

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Unit Price ($ / pc.)
4.627665 $ *
Available: 170 pcs.
Next delivery: 2520 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 44 Weeks **
Quantity
Price per unit*
100 pcs.
4.396282 $
500 pcs.
4.164899 $
1000 pcs.
3.933515 $
3000 pcs.
3.702132 $
10000 pcs.
3.470749 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The UF3C120080K3S is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-247-3 package by Qorvo made. The UF3C120080K3S is using SPQ 30 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrQorvo
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)12V
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 12V
Vgs(th) (Max) @ Id6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs51 nC @ 15 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 100 V
FET Feature-
Power Dissipation (Max)254.2W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Base Product NumberUF3C120080
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 30 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes