N-CHANNEL POWER MOSFET | Infineon Technologies

N-Channel 60 V 30A 36W Through Hole PG-TO220-3

default L
Images may differ 
Unit Price ($ / pc.)
0.18 $ *
Available: 170 pcs.
Next delivery: 2520 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.171 $
500 pcs.
0.162 $
1000 pcs.
0.153 $
3000 pcs.
0.144 $
10000 pcs.
0.135 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IPP230N06L3GXKSA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Infineon Technologies made. The IPP230N06L3GXKSA1 is using SPQ 831 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrInfineon Technologies
SeriesOptiMOS
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C30A
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 11μA
Gate Charge (Qg) (Max) @ Vgs7 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 30 V
FET Feature-
Power Dissipation (Max)36W
Operating Temperature-55°C ~ 175°C
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 831 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
Previous
H5N5011PL-E