POWER FIELD-EFFECT TRANSISTOR | Renesas Electronics Corporation
N-Channel 230 V 35A (Ta) 60W (Tc) Through Hole TO-3PFM
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Unit Price ($ / pc.)
3.64 $
*
Available: 170 pcs.
Next delivery: 2520 pcs.
Manufacturer Leadtime: **
Description
The H5N2305P-E is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-3PFM, SC-93-3 package by Renesas Electronics Corporation made. The H5N2305P-E is using SPQ 42 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Renesas Electronics Corporation |
Series | - |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 230 V |
Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 700mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 60W (Tc) |
Operating Temperature | 150°C |
Grade | - |
Qualification | - |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PFM |
Package / Case | TO-3PFM, SC-93-3 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 42 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |