POWER FIELD-EFFECT TRANSISTOR | Renesas Electronics Corporation

N-Channel 230 V 35A (Ta) 60W (Tc) Through Hole TO-3PFM

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Unit Price ($ / pc.)
3.64 $ *
Available: 170 pcs.
Next delivery: 2520 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
3.458 $
500 pcs.
3.276 $
1000 pcs.
3.094 $
3000 pcs.
2.912 $
10000 pcs.
2.73 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The H5N2305P-E is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-3PFM, SC-93-3 package by Renesas Electronics Corporation made. The H5N2305P-E is using SPQ 42 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrRenesas Electronics Corporation
Series-
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)230 V
Current - Continuous Drain (Id) @ 25°C35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs700mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs105 nC @ 10 V
Vgs (Max)±30V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature150°C
Grade-
Qualification-
Mounting TypeThrough Hole
Supplier Device PackageTO-3PFM
Package / CaseTO-3PFM, SC-93-3
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 42 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes