N-CHANNEL POWER MOSFET | Infineon Technologies

N-Channel 600 V 6.8A (Tc) 66W (Tc) Through Hole PG-TO220-3-1

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Unit Price ($ / pc.)
0.395 $ *
Available: 170 pcs.
Next delivery: 2520 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.37525 $
500 pcs.
0.3555 $
1000 pcs.
0.33575 $
3000 pcs.
0.316 $
10000 pcs.
0.29625 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IPP60R520CP is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Infineon Technologies made. The IPP60R520CP is using SPQ 1 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrInfineon Technologies
SeriesCoolMOS
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs520mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds630 pF @ 100 V
FET Feature-
Power Dissipation (Max)66W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 1 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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