N-CHANNEL POWER MOSFET | NXP USA Inc.

N-Channel 30 V 120A (Tc) 306W (Tc) Surface Mount D2PAK

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Unit Price ($ / pc.)
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Available: 170 pcs.
Next delivery: 2520 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
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Description

The BUK661R6-30C118 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package by NXP USA Inc. made. The BUK661R6-30C118 is using SPQ 342 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrNXP USA Inc.
SeriesTrenchMOS
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs229 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds14964 pF @ 25 V
FET Feature-
Power Dissipation (Max)306W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
GradeAutomotive
QualificationAEC-Q101
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 342 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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