N-CHANNEL POWER MOSFET | NXP USA Inc.
N-Channel 30 V 120A (Tc) 306W (Tc) Through Hole I2PAK
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Available: 170 pcs.
Next delivery: 2520 pcs.
Manufacturer Leadtime: **
Description
The BUK6E2R0-30C127 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-262-3 Long Leads, I2PAK, TO-262AA package by NXP USA Inc. made. The BUK6E2R0-30C127 is using SPQ 329 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | NXP USA Inc. |
Series | TrenchMOS |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.2mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 229 nC @ 10 V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 14964 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 306W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Grade | Automotive |
Qualification | AEC-Q101 |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 329 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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BUK6E2R0-30C127 packaging