N-CHANNEL POWER MOSFET | Harris Corporation

N-Channel 80 V 28A (Tc) 150W (Tc) Through Hole TO-220AB

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Unit Price ($ / pc.)
0.79 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.7505 $
500 pcs.
0.711 $
1000 pcs.
0.6715 $
3000 pcs.
0.632 $
10000 pcs.
0.5925 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IRF541 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Harris Corporation made. The IRF541 is using SPQ 190 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrHarris Corporation
Series-
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs59 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1450 pF @ 25 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 190 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
Previous
IRF225