N-CHANNEL POWER MOSFET | Harris Corporation

N-Channel 200 V 16A (Tc) 125W (Tc) Through Hole TO-220AB

default L
Images may differ 
Unit Price ($ / pc.)
0.44 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.418 $
500 pcs.
0.396 $
1000 pcs.
0.374 $
3000 pcs.
0.352 $
10000 pcs.
0.33 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IRF642 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Harris Corporation made. The IRF642 is using SPQ 342 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrHarris Corporation
Series-
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs220mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1275 pF @ 25 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 342 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
Previous
2SK1460LS
Next
FQA8N80