N-CHANNEL POWER MOSFET | Harris Corporation

N-Channel 200 V 4.5A (Tc) 25W Through Hole TO-205AF (TO-39)

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Unit Price ($ / pc.)
0.505 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.47975 $
500 pcs.
0.4545 $
1000 pcs.
0.42925 $
3000 pcs.
0.404 $
10000 pcs.
0.37875 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IRFF232 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-205AF Metal Can package by Harris Corporation made. The IRFF232 is using SPQ 1 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrHarris Corporation
Series-
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Vgs (Max)-
FET Feature-
Power Dissipation (Max)25W
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageTO-205AF (TO-39)
Package / CaseTO-205AF Metal Can
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 1 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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