N-CHANNEL POWER MOSFET | Harris Corporation

N-Channel 350 V 400mA (Tc) 1W (Tc) Through Hole 4-DIP, Hexdip

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Unit Price ($ / pc.)
0.5 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.475 $
500 pcs.
0.45 $
1000 pcs.
0.425 $
3000 pcs.
0.4 $
10000 pcs.
0.375 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IRFD311 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 4-DIP (0.300", 7.62mm) package by Harris Corporation made. The IRFD311 is using SPQ 300 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrHarris Corporation
Series-
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)350 V
Current - Continuous Drain (Id) @ 25°C400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.6Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds135 pF @ 25 V
FET Feature-
Power Dissipation (Max)1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package4-DIP, Hexdip
Package / Case4-DIP (0.300", 7.62mm)
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 300 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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