N-CHANNEL POWER MOSFET | Harris Corporation
N-Channel 350 V 400mA (Tc) 1W (Tc) Through Hole 4-DIP, Hexdip
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Unit Price ($ / pc.)
0.76 $
*
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.722 $
500 pcs.
0.684 $
1000 pcs.
0.646 $
3000 pcs.
0.608 $
10000 pcs.
0.57 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IRFD323 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 4-DIP (0.300", 7.62mm) package by Harris Corporation made. The IRFD323 is using SPQ 198 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Harris Corporation |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 350 V |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 250mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 455 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-DIP, Hexdip |
| Package / Case | 4-DIP (0.300", 7.62mm) |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 198 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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