N-CHANNEL POWER MOSFET | Harris Corporation

N-Channel 400 V 2A (Tc) 20W (Tc) Through Hole TO-205AF (TO-39)

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Unit Price ($ / pc.)
0.325 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.30875 $
500 pcs.
0.2925 $
1000 pcs.
0.27625 $
3000 pcs.
0.26 $
10000 pcs.
0.24375 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IRFF322 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-205AF Metal Can package by Harris Corporation made. The IRFF322 is using SPQ 500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrHarris Corporation
Series-
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400 V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)20V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 25 V
FET Feature-
Power Dissipation (Max)20W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-205AF (TO-39)
Package / CaseTO-205AF Metal Can
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 500 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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