N-CHANNEL HERMETIC MOS HEXFET | International Rectifier

N-Channel 900 V 6.2A (Tc) 150W (Tc) Through Hole TO-204AA (TO-3)

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Unit Price ($ / pc.)
3.525 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
3.34875 $
500 pcs.
3.1725 $
1000 pcs.
2.99625 $
3000 pcs.
2.82 $
10000 pcs.
2.64375 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IRFAF50 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-204AA, TO-3 package by International Rectifier made. The IRFAF50 is using SPQ 43 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrInternational Rectifier
SeriesHEXFET
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.85Ohm @ 6.2A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 25 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-204AA (TO-3)
Package / CaseTO-204AA, TO-3
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 43 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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