N-CHANNEL POWER MOSFET | Infineon Technologies
N-Channel 34 V Surface Mount PG-TDSON-8-6
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Unit Price ($ / pc.)
0.215 $
*
Available: 171 pcs.
Next delivery: 2541 pcs.
Manufacturer Leadtime: **
Description
The BSC882N03LS G is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-PowerTDFN package by Infineon Technologies made. The BSC882N03LS G is using SPQ 702 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Infineon Technologies |
Series | OptiMOS3 M |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 34 V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250μA |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 15 V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8-6 |
Package / Case | 8-PowerTDFN |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 702 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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BSC882N03LS G ECAD module
BSC882N03LS G specification
BSC882N03LS G certificate