N-CHANNEL POWER MOSFET | NXP USA Inc.
N-Channel 60 V 3A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6
Images may differ
Available: 171 pcs.
Next delivery: 2541 pcs.
Manufacturer Leadtime: **
Description
The PMPB85ENEA115 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 6-UDFN Exposed Pad package by NXP USA Inc. made. The PMPB85ENEA115 is using SPQ 3525 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | NXP USA Inc. |
Series | - |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 95mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 2.7V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 9.2 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 305 pF @ 30 V |
FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta), 15.6W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Grade | Automotive |
Qualification | AEC-Q101 |
Mounting Type | Surface Mount |
Supplier Device Package | DFN2020MD-6 |
Package / Case | 6-UDFN Exposed Pad |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3525 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
Search
PMPB85ENEA115 ECAD module
PMPB85ENEA115 specification
PMPB85ENEA115 certificate