N-CHANNEL POWER MOSFET | Harris Corporation

N-Channel 80 V 3A (Tc) 30W (Tc) Through Hole I-PAK

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Unit Price ($ / pc.)
0.16 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.152 $
500 pcs.
0.144 $
1000 pcs.
0.136 $
3000 pcs.
0.128 $
10000 pcs.
0.12 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The RFD3N08L is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-251-3 Short Leads, IPak, TO-251AA package by Harris Corporation made. The RFD3N08L is using SPQ 951 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrHarris Corporation
Series-
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs800mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Vgs (Max)±10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 951 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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RFD3N08LSM9A