P-CHANNEL MOSFET | NXP USA Inc.

P-Channel 12 V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

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Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
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Description

The PMXB65UPE147 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 3-XDFN Exposed Pad package by NXP USA Inc. made. The PMXB65UPE147 is using SPQ 5495 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrNXP USA Inc.
Series-
PackageBulk
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs72mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds634 pF @ 6 V
FET Feature-
Power Dissipation (Max)317mW (Ta), 8.33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN1010D-3
Package / Case3-XDFN Exposed Pad
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 5495 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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