N-CHANNEL POWER MOSFET | Infineon Technologies
N-Channel 650 V 7.3A (Tc) 83W (Tc) Through Hole PG-TO262-3-1
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Unit Price ($ / pc.)
0.45 $
*
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.4275 $
500 pcs.
0.405 $
1000 pcs.
0.3825 $
3000 pcs.
0.36 $
10000 pcs.
0.3375 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SPI07N65C3XKSA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-262-3 Long Leads, I2PAK, TO-262AA package by Infineon Technologies made. The SPI07N65C3XKSA1 is using SPQ 335 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | CoolMOS |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 350μA |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3-1 |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 335 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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