N-CHANNEL POWER MOSFET | Infineon Technologies

N-Channel 650 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO262-3-1

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Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
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Description

The IPI65R190C is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-262-3 Long Leads, I2PAK, TO-262AA package by Infineon Technologies made. The IPI65R190C is using SPQ 151 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrInfineon Technologies
SeriesCoolMOS
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id3.5V @ 730μA
Gate Charge (Qg) (Max) @ Vgs73 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1620 pF @ 100 V
FET Feature-
Power Dissipation (Max)151W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 151 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes