N-CHANNEL POWER MOSFET | Harris Corporation

N-Channel 30 V 20A (Tc) 90W (Tc) Through Hole I-PAK

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Unit Price ($ / pc.)
0.205 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.19475 $
500 pcs.
0.1845 $
1000 pcs.
0.17425 $
3000 pcs.
0.164 $
10000 pcs.
0.15375 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The RFD20N03 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-251-3 Short Leads, IPak, TO-251AA package by Harris Corporation made. The RFD20N03 is using SPQ 740 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrHarris Corporation
Series-
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs75 nC @ 20 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 25 V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 740 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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