N-CHANNEL POWER MOSFET | NXP USA Inc.
N-Channel 40 V 150A (Ta) 349W (Ta) Through Hole TO-220AB
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Available: 171 pcs.
Next delivery: 2541 pcs.
Manufacturer Leadtime: **
Description
The PSMN1R9-40PL127 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by NXP USA Inc. made. The PSMN1R9-40PL127 is using SPQ 173 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | NXP USA Inc. |
Series | - |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 150A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.7mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 13200 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 349W (Ta) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Base Product Number | PSMN1R9 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 173 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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PSMN1R9-40PL127 ECAD module
PSMN1R9-40PL127 datesheet
PSMN1R9-40PL127 specification
PSMN1R9-40PL127 certificate
PSMN1R9-40PL127 component
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PSMN1R9-40PL127 packaging