POWER FIELD-EFFECT TRANSISTOR | Renesas Electronics Corporation

N-Channel 600 V 16A (Ta) 35W (Tc) Through Hole TO-220FP

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Unit Price ($ / pc.)
2.77 $ *
Available: 175 pcs.
Next delivery: 2625 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
2.6315 $
500 pcs.
2.493 $
1000 pcs.
2.3545 $
3000 pcs.
2.216 $
10000 pcs.
2.0775 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The RJK6014DPP-E0#T2 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 Full Pack package by Renesas Electronics Corporation made. The RJK6014DPP-E0#T2 is using SPQ 55 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrRenesas Electronics Corporation
Series-
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs575mOhm @ 8A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 25 V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 55 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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