2.5A, 500V, 3.000 OHM, N-CHANNEL | Harris Corporation

N-Channel 500 V 4A (Tc) 80W (Tc) Through Hole TO-220AB

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Unit Price ($ / pc.)
0.3 $ *
Available: 175 pcs.
Next delivery: 2625 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.285 $
500 pcs.
0.27 $
1000 pcs.
0.255 $
3000 pcs.
0.24 $
10000 pcs.
0.225 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IRF820 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Harris Corporation made. The IRF820 is using SPQ 503 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrHarris Corporation
SeriesPowerMESH II
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds315 pF @ 25 V
FET Feature-
Power Dissipation (Max)80W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
Base Product NumberIRF8
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 503 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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