2.5A, 500V, 3.000 OHM, N-CHANNEL | Harris Corporation
N-Channel 500 V 4A (Tc) 80W (Tc) Through Hole TO-220AB
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Unit Price ($ / pc.)
0.3 $
*
Available: 175 pcs.
Next delivery: 2625 pcs.
Manufacturer Leadtime: **
Description
The IRF820 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Harris Corporation made. The IRF820 is using SPQ 503 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Harris Corporation |
Series | PowerMESH II |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500 V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 80W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Base Product Number | IRF8 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 503 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |