MOSFET N-CH 1000V 4.3A TO263AB | Harris Corporation
N-Channel 1000 V 4.3A (Tc) 150W (Tc) Surface Mount TO-263AB
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Unit Price ($ / pc.)
1.695 $
*
Available: 176 pcs.
Next delivery: 2646 pcs.
Manufacturer Leadtime: **
Description
The RF1S4N100SM9A is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package by Harris Corporation made. The RF1S4N100SM9A is using SPQ 89 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Harris Corporation |
Series | - |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000 V |
Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
Rds On (Max) @ Id, Vgs | 3.5Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263AB |
Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 89 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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RF1S4N100SM9A ECAD module
RF1S4N100SM9A specification
RF1S4N100SM9A certificate