MOSFET N-CH 600V 1.8A TO263-3 | Infineon Technologies
N-Channel 600 V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO263-3-2
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Unit Price ($ / pc.)
0.2765 $
*
Available: 178 pcs.
Next delivery: 2688 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.262675 $
500 pcs.
0.24885 $
1000 pcs.
0.235025 $
3000 pcs.
0.2212 $
10000 pcs.
0.207375 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SPB02N60S5ATMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package by Infineon Technologies made. The SPB02N60S5ATMA1 is using SPQ 1000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | CoolMOS |
| Package | Tape & Reel (TR)"},{"id":"2","value":"Cut Tape (CT) |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 80μA |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | SPB02N |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 1000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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