MOSFET N-CH 190V 10A TO252 | Rohm Semiconductor
N-Channel 190 V 10A (Tc) 85W (Tc) Surface Mount TO-252
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Unit Price ($ / pc.)
0.616665 $
*
Available: 181 pcs.
Next delivery: 2751 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 21 Weeks **
Quantity
Price per unit*
100 pcs.
0.585832 $
500 pcs.
0.554999 $
1000 pcs.
0.524165 $
3000 pcs.
0.493332 $
10000 pcs.
0.462499 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The RD3S100AAFRATL is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-252-3, DPAK (2 Leads + Tab), SC-63 package by Rohm Semiconductor made. The RD3S100AAFRATL is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 190 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | RD3S100 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 2500 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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