POWER FIELD-EFFECT TRANSISTOR, 5 | Fairchild Semiconductor

N-Channel 600 V 5.5A (Tc) 125W (Tc) Through Hole TO-220-3

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Unit Price ($ / pc.)
0.425 $ *
Available: 184 pcs.
Next delivery: 2814 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.40375 $
500 pcs.
0.3825 $
1000 pcs.
0.36125 $
3000 pcs.
0.34 $
10000 pcs.
0.31875 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The FQP6N60C is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Fairchild Semiconductor made. The FQP6N60C is using SPQ 353 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrFairchild Semiconductor
SeriesQFET
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds810 pF @ 25 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 353 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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