POWER FIELD-EFFECT TRANSISTOR, 3 | Fairchild Semiconductor

N-Channel 900 V 3A (Tc) 51W (Tc) Through Hole TO-220F-3

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Unit Price ($ / pc.)
0.735 $ *
Available: 184 pcs.
Next delivery: 2814 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.69825 $
500 pcs.
0.6615 $
1000 pcs.
0.62475 $
3000 pcs.
0.588 $
10000 pcs.
0.55125 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The FQPF5N90 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 Full Pack package by Fairchild Semiconductor made. The FQPF5N90 is using SPQ 205 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrFairchild Semiconductor
SeriesQFET
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1550 pF @ 25 V
FET Feature-
Power Dissipation (Max)51W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3
Package / CaseTO-220-3 Full Pack
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 205 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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