MOSFET P-CH 20V 2.8A SOT23-3 | Vishay Siliconix
P-Channel 20 V 2.8A (Tc) Surface Mount SOT-23-3 (TO-236)
Images may differ
Available: 249 pcs.
Next delivery: 4179 pcs.
Manufacturer Leadtime: **
Description
The SI2351DS-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-236-3, SC-59, SOT-23-3 package by Vishay Siliconix made. The SI2351DS-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | - |
Package","values":[{}],"isFilterable":true} | |
Product Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
Rds On (Max) @ Id, Vgs | 115mOhm @ 2.4A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 10 V |
FET Feature | - |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Base Product Number | SI2351 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
Search
SI2351DS-T1-GE3 ECAD module
SI2351DS-T1-GE3 datesheet
SI2351DS-T1-GE3 specification
SI2351DS-T1-GE3 certificate
SI2351DS-T1-GE3 component
SI2351DS-T1-GE3 substitute
SI2351DS-T1-GE3 packaging