MOSFET N-CH 60V 35A TO220NIS | Toshiba Semiconductor and Storage

N-Channel 60 V 35A (Ta) 35W (Tc) Through Hole TO-220NIS

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Unit Price ($ / pc.)
$ *
Available: 256 pcs.
Next delivery: 4326 pcs.
Available in 2 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
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500 pcs.
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1000 pcs.
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3000 pcs.
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10000 pcs.
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Description

The 2SK3662(F) is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 Full Pack package by Toshiba Semiconductor and Storage made. The 2SK3662(F) is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
SeriesU-MOSIII
PackageBulk
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs12.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs91 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5120 pF @ 10 V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220NIS
Package / CaseTO-220-3 Full Pack
Base Product Number2SK3662
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes