MOSFET N-CH 600V 37.9A D2PAK | Infineon Technologies
N-Channel 600 V 37.9A (Tc) 278W (Tc) Surface Mount PG-TO263-3
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Unit Price ($ / pc.)
1.626705 $
*
Available: 283 pcs.
Next delivery: 4893 pcs.
Available in 2 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
1.54537 $
500 pcs.
1.464035 $
1000 pcs.
1.382699 $
3000 pcs.
1.301364 $
10000 pcs.
1.220029 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IPB60R099C6ATMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package by Infineon Technologies made. The IPB60R099C6ATMA1 is using SPQ 1000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | CoolMOS C6 |
| Package | Tape & Reel (TR) |
| Product Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 37.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 18.1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.21mA |
| Gate Charge (Qg) (Max) @ Vgs | 119 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2660 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | IPB60R099 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 1000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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