MOSFET N-CH 100V 9.7A TO220AB | Infineon Technologies

N-Channel 100 V 9.7A (Tc) 48W (Tc) Through Hole TO-220AB

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Unit Price ($ / pc.)
$ *
Available: 292 pcs.
Next delivery: 5082 pcs.
Available in 2 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
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500 pcs.
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1000 pcs.
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3000 pcs.
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10000 pcs.
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**Subject to prior sale
Description

The IRF520N is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Infineon Technologies made. The IRF520N is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrInfineon Technologies
SeriesHEXFET
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs200mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds330 pF @ 25 V
FET Feature-
Power Dissipation (Max)48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
Previous
IXFN48N50